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Electroluminescence analysis of irradiated GaInP/GaInAs/Ge space solar cells

Identifieur interne : 000D78 ( Main/Repository ); précédent : 000D77; suivant : 000D79

Electroluminescence analysis of irradiated GaInP/GaInAs/Ge space solar cells

Auteurs : RBID : Pascal:13-0043159

Descripteurs français

Pascal (Inist)
- Electroluminescence, Application spatiale, Cellule solaire, Courant injection, Densité courant, Irradiation, Cellule solaire multijonction, Optoélectronique, Dispositif optoélectronique, Endommagement, Dégradation, Caractéristique courant tension, Diode, Saturation, Rayonnement solaire, Recombinaison radiative, Centre recombinaison, Charge espace, Composé ternaire, Phosphure de gallium, Phosphure d'indium, Germanium, Composé III-V, GaInP.
Wicri :
- concept : Irradiation.

English descriptors

KwdEn :
- Current density, Damaging, Degradation, Diode, Electroluminescence, Gallium phosphide, Germanium, III-V compound, Indium phosphide, Injection current, Irradiation, Multijunction solar cells, Optoelectronic device, Optoelectronics, Radiative recombination, Recombination center, Saturation, Solar cell, Solar radiation, Space application, Space charge, Ternary compound, Voltage current curve.

Abstract

Electroluminescence measured at different injection current densities is used to study the effect of particle irradiation on GaInP/GaInAs/Ge triple-junction solar cells. By employing the optoelectronic reciprocity relation, the irradiation-induced degradation in the J-V characteristics of all individual subcells and their underlying diode saturation parameters is derived. Also, the dependence of the solar cell irradiation response on the position of the irradiation-induced non-radiative recombination centers within the cell active region, i.e., the quasi-neutral regions and the space charge region, is discussed.

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Pascal:13-0043159

Le document en format XML

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<author><name sortKey="Hoheisel, Raymond" uniqKey="Hoheisel R">Raymond Hoheisel</name>
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<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Fraunhofer Institute for Solar Energy Systems, Heidenhofstrasse 2</s1>
<s2>79110 Freiburg</s2>
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<author><name sortKey="Dimroth, Frank" uniqKey="Dimroth F">Frank Dimroth</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Fraunhofer Institute for Solar Energy Systems, Heidenhofstrasse 2</s1>
<s2>79110 Freiburg</s2>
<s3>DEU</s3>
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<author><name sortKey="Bett, Andreas W" uniqKey="Bett A">Andreas W. Bett</name>
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<author><name sortKey="Messenger, Scott R" uniqKey="Messenger S">Scott R. Messenger</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>US Naval Research Laboratory, 4555 Overlook Avenue SE</s1>
<s2>Washington DC 20375</s2>
<s3>USA</s3>
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<author><name sortKey="Jerkins, Phillip P" uniqKey="Jerkins P">Phillip P. Jerkins</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>US Naval Research Laboratory, 4555 Overlook Avenue SE</s1>
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<author><name sortKey="Walters, Robert J" uniqKey="Walters R">Robert J. Walters</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>US Naval Research Laboratory, 4555 Overlook Avenue SE</s1>
<s2>Washington DC 20375</s2>
<s3>USA</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Washington DC 20375</wicri:noRegion>
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</titleStmt>
<publicationStmt><idno type="inist">13-0043159</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0043159 INIST</idno>
<idno type="RBID">Pascal:13-0043159</idno>
<idno type="wicri:Area/Main/Corpus">001380</idno>
<idno type="wicri:Area/Main/Repository">000D78</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0927-0248</idno>
<title level="j" type="abbreviated">Sol. energy mater. sol. cells</title>
<title level="j" type="main">Solar energy materials and solar cells</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Current density</term>
<term>Damaging</term>
<term>Degradation</term>
<term>Diode</term>
<term>Electroluminescence</term>
<term>Gallium phosphide</term>
<term>Germanium</term>
<term>III-V compound</term>
<term>Indium phosphide</term>
<term>Injection current</term>
<term>Irradiation</term>
<term>Multijunction solar cells</term>
<term>Optoelectronic device</term>
<term>Optoelectronics</term>
<term>Radiative recombination</term>
<term>Recombination center</term>
<term>Saturation</term>
<term>Solar cell</term>
<term>Solar radiation</term>
<term>Space application</term>
<term>Space charge</term>
<term>Ternary compound</term>
<term>Voltage current curve</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Electroluminescence</term>
<term>Application spatiale</term>
<term>Cellule solaire</term>
<term>Courant injection</term>
<term>Densité courant</term>
<term>Irradiation</term>
<term>Cellule solaire multijonction</term>
<term>Optoélectronique</term>
<term>Dispositif optoélectronique</term>
<term>Endommagement</term>
<term>Dégradation</term>
<term>Caractéristique courant tension</term>
<term>Diode</term>
<term>Saturation</term>
<term>Rayonnement solaire</term>
<term>Recombinaison radiative</term>
<term>Centre recombinaison</term>
<term>Charge espace</term>
<term>Composé ternaire</term>
<term>Phosphure de gallium</term>
<term>Phosphure d'indium</term>
<term>Germanium</term>
<term>Composé III-V</term>
<term>GaInP</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Irradiation</term>
</keywords>
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<front><div type="abstract" xml:lang="en">Electroluminescence measured at different injection current densities is used to study the effect of particle irradiation on GaInP/GaInAs/Ge triple-junction solar cells. By employing the optoelectronic reciprocity relation, the irradiation-induced degradation in the J-V characteristics of all individual subcells and their underlying diode saturation parameters is derived. Also, the dependence of the solar cell irradiation response on the position of the irradiation-induced non-radiative recombination centers within the cell active region, i.e., the quasi-neutral regions and the space charge region, is discussed.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0>
</fA01>
<fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0>
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<fA05><s2>108</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Electroluminescence analysis of irradiated GaInP/GaInAs/Ge space solar cells</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>HOHEISEL (Raymond)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>DIMROTH (Frank)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>BETT (Andreas W.)</s1>
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<fA11 i1="04" i2="1"><s1>MESSENGER (Scott R.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>JERKINS (Phillip P.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>WALTERS (Robert J.)</s1>
</fA11>
<fA14 i1="01"><s1>The George Washington University, 2121 I Street NW</s1>
<s2>Washington DC 20037</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Fraunhofer Institute for Solar Energy Systems, Heidenhofstrasse 2</s1>
<s2>79110 Freiburg</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>US Naval Research Laboratory, 4555 Overlook Avenue SE</s1>
<s2>Washington DC 20375</s2>
<s3>USA</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<fA20><s1>235-240</s1>
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<fA43 i1="01"><s1>INIST</s1>
<s2>18016</s2>
<s5>354000506240720350</s5>
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<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>20 ref.</s0>
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<fA47 i1="01" i2="1"><s0>13-0043159</s0>
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<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0>
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<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Electroluminescence measured at different injection current densities is used to study the effect of particle irradiation on GaInP/GaInAs/Ge triple-junction solar cells. By employing the optoelectronic reciprocity relation, the irradiation-induced degradation in the J-V characteristics of all individual subcells and their underlying diode saturation parameters is derived. Also, the dependence of the solar cell irradiation response on the position of the irradiation-induced non-radiative recombination centers within the cell active region, i.e., the quasi-neutral regions and the space charge region, is discussed.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D06C02D1</s0>
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<fC02 i1="03" i2="X"><s0>001D06C02B</s0>
</fC02>
<fC02 i1="04" i2="X"><s0>230</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Electroluminescence</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Electroluminescence</s0>
<s5>01</s5>
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<fC03 i1="01" i2="X" l="SPA"><s0>Electroluminiscencia</s0>
<s5>01</s5>
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<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Space application</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Aplicación espacial</s0>
<s5>02</s5>
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<fC03 i1="03" i2="X" l="FRE"><s0>Cellule solaire</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Solar cell</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Célula solar</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Courant injection</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Injection current</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Corriente inyección</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Densité courant</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Current density</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Densidad corriente</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Irradiation</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Irradiation</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Irradiación</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Cellule solaire multijonction</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Multijunction solar cells</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Optoélectronique</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Optoelectronics</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Optoelectrónica</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Dispositif optoélectronique</s0>
<s5>09</s5>
</fC03>
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<s5>09</s5>
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<fC03 i1="09" i2="X" l="SPA"><s0>Dispositivo optoelectrónico</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Endommagement</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Damaging</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Deterioración</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Dégradation</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Degradation</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Degradación</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Caractéristique courant tension</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Voltage current curve</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Característica corriente tensión</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Diode</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Diode</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Diodo</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Saturation</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Saturation</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Saturación</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Rayonnement solaire</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Solar radiation</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Radiación solar</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Recombinaison radiative</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Radiative recombination</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Recombinación radiativa</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Centre recombinaison</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Recombination center</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Centro recombinación</s0>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Charge espace</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Space charge</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Carga espacio</s0>
<s5>18</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Composé ternaire</s0>
<s5>22</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Ternary compound</s0>
<s5>22</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Compuesto ternario</s0>
<s5>22</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Phosphure de gallium</s0>
<s5>23</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Gallium phosphide</s0>
<s5>23</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Galio fosfuro</s0>
<s5>23</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>Phosphure d'indium</s0>
<s5>24</s5>
</fC03>
<fC03 i1="21" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>24</s5>
</fC03>
<fC03 i1="21" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>24</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>Germanium</s0>
<s2>NC</s2>
<s5>25</s5>
</fC03>
<fC03 i1="22" i2="X" l="ENG"><s0>Germanium</s0>
<s2>NC</s2>
<s5>25</s5>
</fC03>
<fC03 i1="22" i2="X" l="SPA"><s0>Germanio</s0>
<s2>NC</s2>
<s5>25</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>26</s5>
</fC03>
<fC03 i1="23" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>26</s5>
</fC03>
<fC03 i1="23" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>26</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>GaInP</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fN21><s1>028</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Space Photovoltaics Research and Technology (SPRAT) Conference</s1>
<s2>22</s2>
<s3>Cleveland, Ohio USA</s3>
<s4>2011-09-20</s4>
</fA30>
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   |texte=   Electroluminescence analysis of irradiated GaInP/GaInAs/Ge space solar cells
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Electroluminescence analysis of irradiated GaInP/GaInAs/Ge space solar cells

Electroluminescence analysis of irradiated GaInP/GaInAs/Ge space solar cells

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